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Infineon Technologies IPI076N12N3 G
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IPI076N12N3 G
Manufacturers: Infineon Technologies
Qty: 422
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Description: MOSFET N-Channel 120V MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:120 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:100 A
Rds On - Drain-Source Resistance:7.6 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:76 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:188 W
Mounting Style:Through Hole
Package / Case:I2PAK-3
Packaging:Tube
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